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Professional equipment provider in the field of chip packaging
1212
Specification Description
Equipment can be applied to stack-die bonding process. The chip can be directly bonding through epoxy dispensing or by using DAF film through heating and pressure. It can achieve high-level compatibility for bonding of both epoxy and Die Attach Film(DAF).

Suitable for SiP packaging, Memory Stack Die (memory chip stacking), CMOS, MEMS, and other processes

Compatible with 8-12 inch wafers, can correspond to DIP/SOT/QFN lead frames, substrate and carrier

Multiple dispensing patterns available

With Bonding Stage heating function (room temperature ~ 200°C) 

Bond force control can be programable 30-300g

High-precision placement, placement accuracy ≦ +/- 10μm

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ProjectSpecification Description
Die Attached ethodEpoxy / Die Attach Film, DAF
Bonding AccuracyX/Y <±20μm, 3σ (epoxy) ; X/Y <±10μm, 3σ (DAF)
Cycle Time0.45 sec./die (exclude pick up time and bonding time) 
Wafer Size8 ~12 inch
Chip Size75~ 700 μm / 25~ 75μm (multi-steps unit )
Chip Thickness0.75mmx0.75mm ~ 20mmx20mm
Substrate /Lead-Frame Size100~300mm(L) x 38~100mm(W) x 0.08~1mm(t)
Bond Force50 ~ 3000g ±10 %;programmable by voice coil motor(V
Pattern Recognition SystemBlack and white, 256 levels of gray scale
Wafer MappingStandard wafer map format
Dispensing methodEpoxy writing /standard pattern application, writing path can be edited
Ejector ( die thickness ≥ 75μm)

Single needle ~ Multi-needle

Ejector( die thickness < 75um)Multi-Steps Unit (option)
Pre-heating / Bonding areaRoom temperature ~ 200℃ Max.
Wafer Vision3.73x2.8mm~23.83x17.87mm
Dispensing Vision11.2X8.4mm
Bond head Vision3.73x2.8mm~23.83x17.87mm
Bond Head Rotation Range±180゜